All Products
GT10J312(Q)
- Part Number
- GT10J312(Q)
- Manufacturer
- Toshiba Semiconductor and Storage
- Description
- IGBT 600V 10A 60W TO220SM
- Data sheet
-
GT10J312(Q).pdf
- Category
- Transistors - IGBTs - Single
- Family
- Transistors - IGBTs - Single
- Series
- -
Request a Quote
Buy the GT10J312(Q) Toshiba Semiconductor and Storage on HK DCY Technology Limited,we are Toshiba Semiconductor and Storage Corporation distributor,we sales new&original and offer 24 hours service,180 days warranty date, send the GT10J312(Q) within 24 hours,please contact our sales team or send email to SALES05@HKDCY.COM Hope we can cooperate in the future.
Specifications
| Part Status | Obsolete |
|---|---|
| IGBT Type | - |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 10A |
| Current - Collector Pulsed (Icm) | 20A |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 10A |
| Power - Max | 60W |
| Switching Energy | - |
| Input Type | Standard |
| Gate Charge | - |
| Td (on/off) @ 25°C | 400ns/400ns |
| Test Condition | 300V, 10A, 100 Ohm, 15V |
| Reverse Recovery Time (trr) | 200ns |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package | TO-220SM |
| Shipment | UPS/EMS/DHL/FedEx Express. |
| Condtion | New original factory. |
- RFQ Email
- SALES05@HKDCY.COM or Inquires online
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