All Products
APT25GP120BDQ1G
- Part Number
- APT25GP120BDQ1G
- Manufacturer
- Microsemi Corporation
- Description
- IGBT 1200V 69A 417W TO247
- Data sheet
-
APT25GP120BDQ1G.pdf
- Category
- Transistors - IGBTs - Single
- Family
- Transistors - IGBTs - Single
- Series
- POWER MOS 7®
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Buy the APT25GP120BDQ1G Microsemi Corporation on HK DCY Technology Limited,we are Microsemi Corporation Corporation distributor,we sales new&original and offer 24 hours service,180 days warranty date, send the APT25GP120BDQ1G within 24 hours,please contact our sales team or send email to SALES05@HKDCY.COM Hope we can cooperate in the future.
Specifications
| Part Status | Active |
|---|---|
| IGBT Type | PT |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Current - Collector (Ic) (Max) | 69A |
| Current - Collector Pulsed (Icm) | 90A |
| Vce(on) (Max) @ Vge, Ic | 3.9V @ 15V, 25A |
| Power - Max | 417W |
| Switching Energy | 500µJ (on), 440µJ (off) |
| Input Type | Standard |
| Gate Charge | 110nC |
| Td (on/off) @ 25°C | 12ns/70ns |
| Test Condition | 600V, 25A, 5 Ohm, 15V |
| Reverse Recovery Time (trr) | - |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247 [B] |
| Shipment | UPS/EMS/DHL/FedEx Express. |
| Condtion | New original factory. |
- RFQ Email
- SALES05@HKDCY.COM or Inquires online
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