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VS-GA200TH60S

VS-GA200TH60S

Part Number
VS-GA200TH60S
Manufacturer
Vishay Semiconductor Diodes Division
Description
IGBT 600V 260A 1042W INT-A-PAK
Data sheet
VS-GA200TH60S.pdf
Category
Transistors - IGBTs - Modules
Family
Transistors - IGBTs - Modules
Series
-

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Comments
  • Buy the VS-GA200TH60S Vishay Semiconductor Diodes Division on HK DCY Technology Limited,we are Vishay Semiconductor Diodes Division Corporation distributor,we sales new&original and offer 24 hours service,180 days warranty date, send the VS-GA200TH60S within 24 hours,please contact our sales team or send email to SALES05@HKDCY.COM Hope we can cooperate in the future.
    Specifications
    Part Status Active
    IGBT Type -
    Configuration Half Bridge
    Voltage - Collector Emitter Breakdown (Max) 600V
    Current - Collector (Ic) (Max) 260A
    Power - Max 1042W
    Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 200A (Typ)
    Current - Collector Cutoff (Max) 5µA
    Input Capacitance (Cies) @ Vce 13.1nF @ 25V
    Input Standard
    NTC Thermistor No
    Operating Temperature -40°C ~ 150°C (TJ)
    Mounting Type Chassis Mount
    Package / Case Double INT-A-PAK (3 + 4)
    Supplier Device Package Double INT-A-PAK
    Shipment UPS/EMS/DHL/FedEx Express.
    Condtion New original factory.
    RFQ Email
    SALES05@HKDCY.COM or Inquires online
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