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GP2M002A065CG

GP2M002A065CG

Part Number
GP2M002A065CG
Manufacturer
Global Power Technologies Group
Description
MOSFET N-CH 650V 1.8A DPAK
Data sheet
GP2M002A065CG.pdf
Category
Transistors - FETs, MOSFETs - Single
Family
Transistors - FETs, MOSFETs - Single
Series
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Comments
  • Buy the GP2M002A065CG Global Power Technologies Group on HK DCY Technology Limited,we are Global Power Technologies Group Corporation distributor,we sales new&original and offer 24 hours service,180 days warranty date, send the GP2M002A065CG within 24 hours,please contact our sales team or send email to SALES05@HKDCY.COM Hope we can cooperate in the future.
    Specifications
    Part Status Active
    FET Type N-Channel
    Technology MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) 650V
    Current - Continuous Drain (Id) @ 25°C 1.8A (Tc)
    Drive Voltage (Max Rds On,Min Rds On) -
    Vgs(th) (Max) @ Id 5V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs 8.5nC @ 10V
    Input Capacitance (Ciss) (Max) @ Vds 353pF @ 25V
    Vgs (Max) -
    FET Feature -
    Power Dissipation (Max) 52W (Tc)
    Rds On (Max) @ Id, Vgs 4.6 Ohm @ 900mA, 10V
    Operating Temperature -55°C ~ 150°C (TJ)
    Mounting Type Surface Mount
    Supplier Device Package D-Pak
    Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
    Shipment UPS/EMS/DHL/FedEx Express.
    Condtion New original factory.
    RFQ Email
    SALES05@HKDCY.COM or Inquires online
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