 
                  
 CSD13306WT.pdf
CSD13306WT.pdf
    
| Part Status | Active | 
|---|---|
| FET Type | N-Channel | 
| Technology | MOSFET (Metal Oxide) | 
| Drain to Source Voltage (Vdss) | 12V | 
| Current - Continuous Drain (Id) @ 25°C | 3.5A (Ta) | 
| Drive Voltage (Max Rds On,Min Rds On) | 2.5V, 4.5V | 
| Vgs(th) (Max) @ Id | 1.3V @ 250µA | 
| Gate Charge (Qg) (Max) @ Vgs | 11.2nC @ 4.5V | 
| Input Capacitance (Ciss) (Max) @ Vds | 1370pF @ 6V | 
| Vgs (Max) | ±10V | 
| FET Feature | - | 
| Power Dissipation (Max) | 1.9W (Ta) | 
| Rds On (Max) @ Id, Vgs | 10.2 mOhm @ 1.5A, 4.5V | 
| Operating Temperature | -55°C ~ 150°C (TJ) | 
| Mounting Type | Surface Mount | 
| Supplier Device Package | 6-DSBGA (1x1.5) | 
| Package / Case | 6-UFBGA, DSBGA | 
| Shipment | UPS/EMS/DHL/FedEx Express. | 
| Condtion | New original factory. | 
| Datasheet | Image | Part Number | Manufacturers | Description | View | 
|---|---|---|---|---|---|
|  |    | PMV450ENEAR | Nexperia USA Inc. | MOSFET N-CH 60V TO-236AB | Inquiry | 
|  |    | NMSD200B01-7 | Diodes Incorporated | MOSFET N-CH 60V 0.2A SOT363 | Inquiry | 
|  |    | TPCC8002-H(TE12L,Q | Toshiba Semiconductor and Storage | MOSFET N-CH 30V 22A 8TSON | Inquiry | 
|  |    | DMG4468LFG | Diodes Incorporated | MOSFET N-CH 30V 7.62A 8DFN | Inquiry | 
|  |    | MCH3476-TL-H | ON Semiconductor | MOSFET N-CH 20V 2A MCPH3 | Inquiry | 
|  |    | ZXMN2069FTA | Diodes Incorporated | MOSFET N-CH SOT23-3 | Inquiry | 
|  |    | DMN3024LSS-13 | Diodes Incorporated | MOSFET N-CH 30V 6.4A 8SO | Inquiry | 
|  |    | DMN10H220L-13 | Diodes Incorporated | MOSFET N-CH 100V 1.6A SOT23 | Inquiry | 
|  |    | CSD23202W10 | Texas Instruments | MOSFET P-CH 12V 2.2A 4DSBGA | Inquiry | 
|  |    | AO5404E | Alpha & Omega Semiconductor Inc. | MOSFET N-CH 20V 0.5A SC89-3L | Inquiry | 

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