All Products
APTM100VDA35T3G
- Part Number
- APTM100VDA35T3G
- Manufacturer
- Microsemi Corporation
- Description
- MOSFET 2N-CH 1000V 22A SP3
- Data sheet
-
APTM100VDA35T3G.pdf
- Category
- Transistors - FETs, MOSFETs - Arrays
- Family
- Transistors - FETs, MOSFETs - Arrays
- Series
- POWER MOS 7®
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Specifications
| Part Status | Obsolete |
|---|---|
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 1000V (1kV) |
| Current - Continuous Drain (Id) @ 25°C | 22A |
| Rds On (Max) @ Id, Vgs | 420 mOhm @ 11A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Gate Charge (Qg) (Max) @ Vgs | 186nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 5200pF @ 25V |
| Power - Max | 390W |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | SP3 |
| Supplier Device Package | SP3 |
| Shipment | UPS/EMS/DHL/FedEx Express. |
| Condtion | New original factory. |
- RFQ Email
- SALES05@HKDCY.COM or Inquires online
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