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RN1423TE85LF RN1423TE85LF

RN1423TE85LF

Part Number
RN1423TE85LF
Manufacturer
Toshiba Semiconductor and Storage
Description
TRANS PREBIAS NPN 200MW SMINI
Data sheet
RN1423TE85LF.pdf
Category
Transistors - Bipolar (BJT) - Single, Pre-Biased
Family
Transistors - Bipolar (BJT) - Single, Pre-Biased
Series
-

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Comments
  • Buy the RN1423TE85LF Toshiba Semiconductor and Storage on HK DCY Technology Limited,we are Toshiba Semiconductor and Storage Corporation distributor,we sales new&original and offer 24 hours service,180 days warranty date, send the RN1423TE85LF within 24 hours,please contact our sales team or send email to SALES05@HKDCY.COM Hope we can cooperate in the future.
    Specifications
    Part Status Active
    Transistor Type NPN - Pre-Biased
    Current - Collector (Ic) (Max) 800mA
    Voltage - Collector Emitter Breakdown (Max) 50V
    Resistor - Base (R1) (Ohms) 4.7k
    Resistor - Emitter Base (R2) (Ohms) 4.7k
    DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 100mA, 1V
    Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 50mA
    Current - Collector Cutoff (Max) 500nA
    Frequency - Transition 300MHz
    Power - Max 200mW
    Mounting Type Surface Mount
    Package / Case TO-236-3, SC-59, SOT-23-3
    Supplier Device Package S-Mini
    Shipment UPS/EMS/DHL/FedEx Express.
    Condtion New original factory.
    RFQ Email
    SALES05@HKDCY.COM or Inquires online
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