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UTV8100B

UTV8100B

Part Number
UTV8100B
Manufacturer
Microsemi Corporation
Description
TRANS RF BIPO 290W 15A 55RT2
Data sheet
UTV8100B.pdf
Category
Transistors - Bipolar (BJT) - RF
Family
Transistors - Bipolar (BJT) - RF
Series
-

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Comments
  • Buy the UTV8100B Microsemi Corporation on HK DCY Technology Limited,we are Microsemi Corporation Corporation distributor,we sales new&original and offer 24 hours service,180 days warranty date, send the UTV8100B within 24 hours,please contact our sales team or send email to SALES05@HKDCY.COM Hope we can cooperate in the future.
    Specifications
    Part Status Active
    Transistor Type NPN
    Voltage - Collector Emitter Breakdown (Max) 60V
    Frequency - Transition 470MHz ~ 860MHz
    Noise Figure (dB Typ @ f) -
    Gain 8.5dB ~ 9.5dB
    Power - Max 290W
    DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 1A, 5V
    Current - Collector (Ic) (Max) 15A
    Operating Temperature 200°C (TJ)
    Mounting Type Chassis Mount
    Package / Case 55RT
    Supplier Device Package 55RT
    Shipment UPS/EMS/DHL/FedEx Express.
    Condtion New original factory.
    RFQ Email
    SALES05@HKDCY.COM or Inquires online
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