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NJX1675PDR2G NJX1675PDR2G

NJX1675PDR2G

Part Number
NJX1675PDR2G
Manufacturer
ON Semiconductor
Description
TRANS NPN/PNP 30V 3A 8SOIC
Data sheet
NJX1675PDR2G.pdf
Category
Transistors - Bipolar (BJT) - Arrays
Family
Transistors - Bipolar (BJT) - Arrays
Series
-

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Comments
  • Buy the NJX1675PDR2G ON Semiconductor on HK DCY Technology Limited,we are ON Semiconductor Corporation distributor,we sales new&original and offer 24 hours service,180 days warranty date, send the NJX1675PDR2G within 24 hours,please contact our sales team or send email to SALES05@HKDCY.COM Hope we can cooperate in the future.
    Specifications
    Part Status Obsolete
    Transistor Type NPN, PNP
    Current - Collector (Ic) (Max) 3A
    Voltage - Collector Emitter Breakdown (Max) 30V
    Vce Saturation (Max) @ Ib, Ic 115mV @ 200mA, 2A, 170mV @ 200mA, 2A
    Current - Collector Cutoff (Max) 100nA (ICBO)
    DC Current Gain (hFE) (Min) @ Ic, Vce 180 @ 1A, 2V
    Power - Max 2W
    Frequency - Transition 100MHz, 120MHz
    Operating Temperature -55°C ~ 150°C (TJ)
    Mounting Type Surface Mount
    Package / Case 8-SOIC (0.154", 3.90mm Width)
    Supplier Device Package 8-SOIC
    Shipment UPS/EMS/DHL/FedEx Express.
    Condtion New original factory.
    RFQ Email
    SALES05@HKDCY.COM or Inquires online
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