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HN4A51JTE85LF HN4A51JTE85LF

HN4A51JTE85LF

Part Number
HN4A51JTE85LF
Manufacturer
Toshiba Semiconductor and Storage
Description
TRANS 2PNP 120V 0.1A SMV
Data sheet
HN4A51JTE85LF.pdf
Category
Transistors - Bipolar (BJT) - Arrays
Family
Transistors - Bipolar (BJT) - Arrays
Series
-

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Comments
  • Buy the HN4A51JTE85LF Toshiba Semiconductor and Storage on HK DCY Technology Limited,we are Toshiba Semiconductor and Storage Corporation distributor,we sales new&original and offer 24 hours service,180 days warranty date, send the HN4A51JTE85LF within 24 hours,please contact our sales team or send email to SALES05@HKDCY.COM Hope we can cooperate in the future.
    Specifications
    Part Status Active
    Transistor Type 2 PNP (Dual)
    Current - Collector (Ic) (Max) 100mA
    Voltage - Collector Emitter Breakdown (Max) 120V
    Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA
    Current - Collector Cutoff (Max) 100nA (ICBO)
    DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 6V
    Power - Max 300mW
    Frequency - Transition 100MHz
    Operating Temperature 150°C (TJ)
    Mounting Type Surface Mount
    Package / Case SC-74A, SOT-753
    Supplier Device Package SMV
    Shipment UPS/EMS/DHL/FedEx Express.
    Condtion New original factory.
    RFQ Email
    SALES05@HKDCY.COM or Inquires online
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