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HN1B04FE-Y,LF HN1B04FE-Y,LF

HN1B04FE-Y,LF

Part Number
HN1B04FE-Y,LF
Manufacturer
Toshiba Semiconductor and Storage
Description
TRANS NPN/PNP 50V 0.15A ES6
Data sheet
HN1B04FE-Y,LF.pdf
Category
Transistors - Bipolar (BJT) - Arrays
Family
Transistors - Bipolar (BJT) - Arrays
Series
-

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Comments
  • Buy the HN1B04FE-Y,LF Toshiba Semiconductor and Storage on HK DCY Technology Limited,we are Toshiba Semiconductor and Storage Corporation distributor,we sales new&original and offer 24 hours service,180 days warranty date, send the HN1B04FE-Y,LF within 24 hours,please contact our sales team or send email to SALES05@HKDCY.COM Hope we can cooperate in the future.
    Specifications
    Part Status Active
    Transistor Type NPN, PNP
    Current - Collector (Ic) (Max) 150mA
    Voltage - Collector Emitter Breakdown (Max) 50V
    Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA
    Current - Collector Cutoff (Max) 100nA (ICBO)
    DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 2mA, 6V
    Power - Max 100mW
    Frequency - Transition 80MHz
    Operating Temperature 150°C (TJ)
    Mounting Type Surface Mount
    Package / Case SOT-563, SOT-666
    Supplier Device Package ES6
    Shipment UPS/EMS/DHL/FedEx Express.
    Condtion New original factory.
    RFQ Email
    SALES05@HKDCY.COM or Inquires online
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