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RN2911,LF RN2911,LF

RN2911,LF

Part Number
RN2911,LF
Manufacturer
Toshiba Semiconductor and Storage
Description
TRANS 2PNP PREBIAS 0.2W US6
Data sheet
RN2911,LF.pdf
Category
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Family
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Series
-

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Comments
  • Buy the RN2911,LF Toshiba Semiconductor and Storage on HK DCY Technology Limited,we are Toshiba Semiconductor and Storage Corporation distributor,we sales new&original and offer 24 hours service,180 days warranty date, send the RN2911,LF within 24 hours,please contact our sales team or send email to SALES05@HKDCY.COM Hope we can cooperate in the future.
    Specifications
    Part Status Active
    Transistor Type 2 PNP - Pre-Biased (Dual)
    Current - Collector (Ic) (Max) 100mA
    Voltage - Collector Emitter Breakdown (Max) 50V
    Resistor - Base (R1) (Ohms) 10k
    Resistor - Emitter Base (R2) (Ohms) -
    DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA, 5V
    Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
    Current - Collector Cutoff (Max) 100nA (ICBO)
    Frequency - Transition 200MHz
    Power - Max 200mW
    Mounting Type Surface Mount
    Package / Case 6-TSSOP, SC-88, SOT-363
    Supplier Device Package US6
    Shipment UPS/EMS/DHL/FedEx Express.
    Condtion New original factory.
    RFQ Email
    SALES05@HKDCY.COM or Inquires online
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