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RN1702JE(TE85L,F)
- Part Number
- RN1702JE(TE85L,F)
- Manufacturer
- Toshiba Semiconductor and Storage
- Description
- TRANS 2NPN PREBIAS 0.1W ESV
- Data sheet
-
RN1702JE(TE85L,F).pdf
- Category
- Transistors - Bipolar (BJT) - Arrays, Pre-Biased
- Family
- Transistors - Bipolar (BJT) - Arrays, Pre-Biased
- Series
- -
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Specifications
| Part Status | Active |
|---|---|
| Transistor Type | 2 NPN - Pre-Biased (Dual) (Emitter Coupled) |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) (Ohms) | 10k |
| Resistor - Emitter Base (R2) (Ohms) | 10k |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 10mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| Frequency - Transition | 250MHz |
| Power - Max | 100mW |
| Mounting Type | Surface Mount |
| Package / Case | SOT-553 |
| Supplier Device Package | ESV |
| Shipment | UPS/EMS/DHL/FedEx Express. |
| Condtion | New original factory. |
- RFQ Email
- SALES05@HKDCY.COM or Inquires online
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