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EMF8T2R
- Part Number
- EMF8T2R
- Manufacturer
- Rohm Semiconductor
- Description
- TRANS NPN PREBIAS/NPN 0.15W EMT6
- Data sheet
-
EMF8T2R.pdf
- Category
- Transistors - Bipolar (BJT) - Arrays, Pre-Biased
- Family
- Transistors - Bipolar (BJT) - Arrays, Pre-Biased
- Series
- -
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Specifications
| Part Status | Not For New Designs |
|---|---|
| Transistor Type | 1 NPN Pre-Biased, 1 NPN |
| Current - Collector (Ic) (Max) | 100mA, 500mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V, 12V |
| Resistor - Base (R1) (Ohms) | 47k |
| Resistor - Emitter Base (R2) (Ohms) | 47k |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 68 @ 5mA, 5V / 270 @ 10mA, 2V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA |
| Current - Collector Cutoff (Max) | 500nA |
| Frequency - Transition | 250MHz, 320MHz |
| Power - Max | 150mW |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Supplier Device Package | EMT6 |
| Shipment | UPS/EMS/DHL/FedEx Express. |
| Condtion | New original factory. |
- RFQ Email
- SALES05@HKDCY.COM or Inquires online
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